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SiGe合金综述:最新的研究进展及热电性能 优化策略
Review of SiGe Alloys: Latest Research Progress and Optimization Strategies for Thermoelectric Properties
  
DOI:
中文关键词:  硅锗合金  热电性能  优化策略  功率因子  晶格热导率
英文关键词:SiGe alloy  Thermoelectric performance  Optimization strategies  Power factor  Lattice thermal conductivity  
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作者单位
余锦1,赖华俊2,施润泽1,彭英3,苗蕾4 1桂林电子科技大学 材料科学与工程学院广西 桂林 541004 2广西科学院南宁 530007 3桂林电子科技大学 信息与通信学院广西 桂林 541004 4广西大学 物理科学与工程学院南宁 530004 
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中文摘要:
      硅锗(SiGe)合金作为代表性中高温热电材料,在太空探测航天器的辅助电源上,已经获得了较为广泛的应用。SiGe合金具备结构稳定、元素丰富、无毒、耐高温、易于工业集成等显著优势,但较低的热电性能限制了SiGe合金的实际应用与推广。基于此,本文综述了SiGe基热电材料在电、热两方面的协同优化策略,以及相关最新研究进展。在电学方面,揭示了调制掺杂、能量过滤机制等优化策略对提高SiGe合金的功率因子的重要性;在热学方面,详细回顾了降低SiGe合金晶格热导率的诸多策略,包括纳米结构化、SiGe-金属硅化物/硅化物复合以及SiGe-氧化物复合策略,并比较了不同优化策略对晶格热导率的降低效果。通过电热输运参数的协同优化,p型和n型SiGe基热电材料的zT值分别达到了1.81(1100 K)和1.7(1173 K),为当前文献报道的最高值。本文对于SiGe块体材料的热电性能的进一步优化提供了一定的参考。
英文摘要:
      Silicon-germanium (SiGe) alloy, as a representative medium and high temperature thermoelectric material, has been widely applied in auxiliary power supply of space exploration spacecraft. SiGe alloy has significant advantages such as stable structure, rich elements, non-toxic, high-temperature resistance, and easy industrial integration. However, the lower thermoelectric performance limits the practical application and promotion of SiGe alloys. Based on above, this article comprehensively describes the collaborative optimization strategies of SiGe alloys in both electrical and thermal properties, as well as relevant latest research progress. In terms of electrical properties, the importance of modulation doping and energy filtering mechanism to improve the power factor of SiGe alloys was revealed; In terms of thermal properties, a detailed review was conducted on the strategies for reducing lattice thermal conductivity of SiGe alloys, including nanostructure, SiGe-metal silicide/silicide composite, and SiGe-oxide composite strategies. And the effects of different optimization strategies on reducing lattice thermal conductivity were compared. Through collaborative optimization of electrical and thermal transport parameters, the zT values of p-type and n-type SiGe-based thermoelectric materials reached 1.81 (1100 K) and 1.7 (1173 K), respectively, which are the highest values reported in current research. This article provides a certain reference for further optimization of the thermoelectric properties of SiGe bulk materials.
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